Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH4)2Sx-treated indium-tin oxide substrates

Yow Jon Lin; Chang Feng You; Wei Yang Chou; Shih Ting Lin

doi:10.1149/1.2225599

Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH₄)₂S_x-treated indium-tin oxide substrates

Yow Jon Lin, Chang Feng You, Wei Yang Chou, Shih Ting Lin

光電科學與工程學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Photoelectron spectroscopy measurements show that (NH₄) ₂S_x surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (V_O) by sulfur and a reduction in the amount of V_O near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH₄)₂S_x treatment, shows that (NH₄)₂S_x treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of V_O-related defects near the ITO surface region).

原文	English
頁（從 - 到）	G302-G304
期刊	Electrochemical and Solid-State Letters
卷	9
發行號	10
DOIs	https://doi.org/10.1149/1.2225599
出版狀態	Published - 2006

All Science Journal Classification (ASJC) codes

一般化學工程
一般材料科學
物理與理論化學
電化學
電氣與電子工程

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10.1149/1.2225599

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title = "Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH4)2Sx-treated indium-tin oxide substrates",

abstract = "Photoelectron spectroscopy measurements show that (NH4) 2Sx surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (VO) by sulfur and a reduction in the amount of VO near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH4)2Sx treatment, shows that (NH4)2Sx treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of VO-related defects near the ITO surface region).",

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year = "2006",

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AU - You, Chang Feng

AU - Chou, Wei Yang

AU - Lin, Shih Ting

PY - 2006

Y1 - 2006

N2 - Photoelectron spectroscopy measurements show that (NH4) 2Sx surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (VO) by sulfur and a reduction in the amount of VO near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH4)2Sx treatment, shows that (NH4)2Sx treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of VO-related defects near the ITO surface region).

AB - Photoelectron spectroscopy measurements show that (NH4) 2Sx surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (VO) by sulfur and a reduction in the amount of VO near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH4)2Sx treatment, shows that (NH4)2Sx treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of VO-related defects near the ITO surface region).

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Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH4)2Sx-treated indium-tin oxide substrates

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Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH₄)₂S_x-treated indium-tin oxide substrates