Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline Si

Young Hae Kwon; C. J. Park; W. C. Lee; D. J. Fu; Y. Shon; T. W. Kang; C. Y. Hong; H. Y. Cho; Kang L. Wang

doi:10.1063/1.1467617

Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline Si

Young Hae Kwon
, C. J. Park
, W. C. Lee
, D. J. Fu
, Y. Shon
, T. W. Kang
, C. Y. Hong
, H. Y. Cho
, Kang L. Wang

電機資訊學院

研究成果: Article › 同行評審

54 引文斯高帕斯（Scopus）

摘要

Nanocrystalline(nc)-Si was grown on SiO₂ by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050°C for 30 s. Metal-oxide-semiconductor (MOS) structures were fabricated and capacitance-voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are E_v+0.29eV (H1) and E_v+0.42eV (H2), and the capture cross sections are 4.70×10^-16cm ² and 1.44×10^-15cm², respectively. The presence of SiH and SiH₂ bonds was confirmed by Fourier transform infrared spectroscopy.

原文	English
頁（從 - 到）	2502-2504
頁數	3
期刊	Applied Physics Letters
卷	80
發行號	14
DOIs	https://doi.org/10.1063/1.1467617
出版狀態	Published - 2002 4月 8

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.1467617

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title = "Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline Si",

abstract = "Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050°C for 30 s. Metal-oxide-semiconductor (MOS) structures were fabricated and capacitance-voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29eV (H1) and Ev+0.42eV (H2), and the capture cross sections are 4.70×10-16cm 2 and 1.44×10-15cm2, respectively. The presence of SiH and SiH2 bonds was confirmed by Fourier transform infrared spectroscopy.",

author = "Kwon, \{Young Hae\} and Park, \{C. J.\} and Lee, \{W. C.\} and Fu, \{D. J.\} and Y. Shon and Kang, \{T. W.\} and Hong, \{C. Y.\} and Cho, \{H. Y.\} and Wang, \{Kang L.\}",

year = "2002",

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AU - Kwon, Young Hae

AU - Park, C. J.

AU - Lee, W. C.

AU - Fu, D. J.

AU - Shon, Y.

AU - Kang, T. W.

AU - Hong, C. Y.

AU - Cho, H. Y.

AU - Wang, Kang L.

PY - 2002/4/8

Y1 - 2002/4/8

N2 - Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050°C for 30 s. Metal-oxide-semiconductor (MOS) structures were fabricated and capacitance-voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29eV (H1) and Ev+0.42eV (H2), and the capture cross sections are 4.70×10-16cm 2 and 1.44×10-15cm2, respectively. The presence of SiH and SiH2 bonds was confirmed by Fourier transform infrared spectroscopy.

AB - Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050°C for 30 s. Metal-oxide-semiconductor (MOS) structures were fabricated and capacitance-voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29eV (H1) and Ev+0.42eV (H2), and the capture cross sections are 4.70×10-16cm 2 and 1.44×10-15cm2, respectively. The presence of SiH and SiH2 bonds was confirmed by Fourier transform infrared spectroscopy.

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Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline Si

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