Memory testing and built-in self-test

研究成果: Chapter

摘要

This chapter discusses important aspects of semiconductor memory testing, including fault models, test algorithms, fault simulation, automatic test algorithm generation, and BIST. The BIST architecture presented in this chapter supports March-based tests and diagnosis. It presents a memory fault simulator called random access memory simulator for error screening (RAMSES), which consists of a simulation engine and numerous fault descriptors. The simulation engine reads the test inputs and sets the operation flags for each memory cell. Fault coverage is determined by checking the fault descriptors for predefined conditions. The test algorithm generator by simulation (TAGS) is then presented, which is based on RAMSES and March test algorithms. March tests have been widely considered to be the most efficient for conventional RAM fault models. This chapter also discusses memory built-in self-test (BIST). Finally, the chapter addresses a memory BIST compiler called BRAINS (Bist for Ram IN Seconds) which supports major types of SRAM and DRAM by using novel BIST templates and memory specification techniques.

原文English
主出版物標題VLSI Test Principles and Architectures
發行者Elsevier Inc.
頁面461-515
頁數55
ISBN(列印)9780123705976
DOIs
出版狀態Published - 2006 十二月 1

All Science Journal Classification (ASJC) codes

  • Business, Management and Accounting(all)

指紋 深入研究「Memory testing and built-in self-test」主題。共同形成了獨特的指紋。

  • 引用此

    Wu, C. W. (2006). Memory testing and built-in self-test. 於 VLSI Test Principles and Architectures (頁 461-515). Elsevier Inc.. https://doi.org/10.1016/B978-012370597-6/50012-3