Metal-semiconductor-metal photodetectors using widegap semiconductor capping layer

研究成果: Conference contribution

摘要

To improve the Schottky contact performances and carrier confinement, we employed the wide bandgap material InAlGaP for the capping in the metal-semiconductor-metal photodetectors (MSM-PDs). The electrical behaviors of InAlGaP/GaAs MSM-PD are studied by reverse dark current-voltage measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the dependence of the barrier height on the electric field in the depletion region and hence on the applied bias. We investigated the possibilities of evaluating the main Schottky contact parameters straight on the MSM-PD structure with and without capping layer InAlGaP. We also measured the relationship between the photoresponsivity and difference photon wavelength.

原文English
主出版物標題Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
編輯K. T. Chan, H. S. Kwok
發行者Institute of Electrical and Electronics Engineers Inc.
頁面15-18
頁數4
ISBN(電子)0780378873, 9780780378872
DOIs
出版狀態Published - 2003 一月 1
事件6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
持續時間: 2003 九月 122003 九月 14

出版系列

名字Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

Other

Other6th Chinese Optoelectronics Symposium, COES 2003
國家/地區China
城市Hong Kong
期間03-09-1203-09-14

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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