Metal-semiconductor-metal photodetectors using widegap semiconductor capping layer

Keyphrases

• Applied Bias 25%
• Barrier Height 25%
• Capping Layer 100%
• Carrier Confinement 25%
• Contact Parameters 25%
• Contact Performance 25%
• Current-voltage Measurements 25%
• Dark Current-voltage 25%
• Depletion Region 25%
• Electric Field (E-field) 25%
• Electrical Behavior 25%
• Gallium Arsenide 25%
• Metal-semiconductor-metal Photodetector 100%
• Photoresponsivity 25%
• Reverse Characteristics 25%
• Schottky Contact 75%
• Wide Band Gap Semiconductors 100%
• Wide Bandgap Materials 25%

Material Science

• Gallium Arsenide 25%
• Photosensor 100%
• Schottky Barrier 75%