TY - JOUR
T1 - Method for extracting Ge concentration of SiGe channel FinFET device using three-dimensional spectroscopic ellipsometry-optical critical dimension metrology
AU - Chen, Chien Hung
AU - Fang, Ying Chien
AU - Chiang, Chung Hao
AU - Chu, Sheng Yuan
PY - 2014
Y1 - 2014
N2 - The Ge concentration play an importion role in SiGe channel Fin-FET device. A fast, more convenient, and nondestructive analysis method, three-dimensional spectroscopic ellipsometry-optical critical dimension metrology (3D SE-OCD), is used to extract Ge concentrations of SiGe channel FinFETs. The refractive index (n) and extinction index (k) of SiGe with different Ge concentrations investigated under wavelengths λn = 370 nm and λk = 525 nm. Results show the Ge concentration of SiGe channel can be accurately measured using a 3D SE-OCD.
AB - The Ge concentration play an importion role in SiGe channel Fin-FET device. A fast, more convenient, and nondestructive analysis method, three-dimensional spectroscopic ellipsometry-optical critical dimension metrology (3D SE-OCD), is used to extract Ge concentrations of SiGe channel FinFETs. The refractive index (n) and extinction index (k) of SiGe with different Ge concentrations investigated under wavelengths λn = 370 nm and λk = 525 nm. Results show the Ge concentration of SiGe channel can be accurately measured using a 3D SE-OCD.
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U2 - 10.1149/2.0031409ssl
DO - 10.1149/2.0031409ssl
M3 - Article
AN - SCOPUS:84906662518
SN - 2162-8742
VL - 3
SP - P105-P107
JO - ECS Solid State Letters
JF - ECS Solid State Letters
IS - 9
ER -