Method of creating local semi-insulating regions on silicon wafers for device isolation and realization of high-Q inductors

Chungpin Liao, Tzuen Hsi Huang, Chwan Ying Lee, Denny Tang, Shan Ming Lan, Tsun Neng Yang, Li Fu Lin

研究成果: Article

35 引文 斯高帕斯(Scopus)

摘要

Penetrating proton beams from a compact ion cyclotron (diameter: 1.5 m, height: 2 m) were employed to create local semi-insulating regions within silicon substrates to facilitate device isolation in mixed-mode (analog-digital) integrated circuits (IC's) and realization of RF IC's with high-Q inductors. Experiments revealed that resistivity values of 1 MΩ-cm could be reached by practical proton fluences on silicon wafers of original resistivity of more than about 1 Ω-cm. Significant improvement was evidenced on Q values of irradiated inductors. Effect of reduced inductor metal conductivity from bombardment was over-shadowed by the more enhanced Q behavior, if the proton fluence is sufficiently large.

原文English
頁(從 - 到)461-462
頁數2
期刊IEEE Electron Device Letters
19
發行號12
DOIs
出版狀態Published - 1998 十二月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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