Methylamine growth of SiCN films using ECR-CVD

C. Y. Wen, J. J. Wu, H. J. Lo, L. C. Chen, K. H. Chen, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)


Continuous polycrystalline SiCN films with high nucleation density have been successfully deposited by using CH3NH2 as carbon source gas in an ECR-CVD reactor. From the kinetic point of view, using CH3NH2 as carbon source could provide more abundant active carbon species in the gas phase to enhance the carbon incorporation in the SiCN films. The compositions of the SiCN films analyzed from Rutherford Backscattering Spectroscopy showed that higher [CH3NH2]/[SiH4] ratio led to higher carbon content in the films. Moreover, a lower carbon content was measured when the film was deposited at higher substrate temperature. The direct band gap of the aforementioned SiCN films determined using PzR is around 4.4 eV, indicating a wide band gap material for blue-UV optoelectronics.

頁(從 - 到)115-120
期刊Materials Research Society Symposium - Proceedings
出版狀態Published - 2000
事件Chemical Processing of Dielectrics, Insulators and Electronic Ceramics - Boston, MA, USA
持續時間: 1999 11月 291999 12月 1

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業


深入研究「Methylamine growth of SiCN films using ECR-CVD」主題。共同形成了獨特的指紋。