Mg-doped beta-Ga2O3 films deposited by plasma-enhanced atomic layer deposition system for metal-semiconductor-metal ultraviolet C photodetectors

Shao Yu Chu, Tsung Han Yeh, Ching Ting Lee, Hsin Ying Lee

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this study, magnesium-doped gallium oxide (Ga2O3:Mg) films with various Mg contents were deposited by a plasma-enhanced atomic layer deposition (PE-ALD) system and were used as an active layer of metal-semiconductor-metal ultraviolet C photodetectors (MSM UVC-PDs). Compared with Ga element, owing to the lower electronegativity of Mg element, Mg–O bonds were more easily formed than Ga–O bonds. Consequently, oxygen vacancies could be reduced to improve properties. By using the measurement of X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL), the results verified that Ga2O3:Mg films with Mg content of 3.28 at.% had the lowest oxygen vacancy density. The cut-off wavelength of the devices was blue-shifted from 250 nm to 220 nm by increasing Mg content from 0 at.% to 5.22 at.%. The maximum photoresponsivity of 22.06, 10.24, 6.89, and 1.67 A/W was obtained for the devices with the Mg content of 0 at.%, 1.91 at.%, 3.28 at.%, and 5.22 at.%, respectively. The corresponding UV–visible rejection ratio was 3.56 × 104, 3.86 × 104, 4.42 × 104, and 3.48 × 103, respectively. The flicker noise was the dominant noise. By appropriately doping the Mg content in Ga2O3 films, the detectivity of the MSM UVC-PDs was effectively improved.

原文English
文章編號106471
期刊Materials Science in Semiconductor Processing
142
DOIs
出版狀態Published - 2022 5月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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