Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures

Yen Lin Lai; Regime Chen; Chuan Pu Liu; Yo Way Lin

Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures

Yen Lin Lai, Regime Chen, Chuan Pu Liu, Yo Way Lin

研究成果: Paper › 同行評審

摘要

The polarity of InGaN/GaN supeilattice structures grown on c-plane sapphires by metal-organic chemical vapor deposition (MOCVD) comprised of an GaN buffer layer doped with different impurities is studied. Photoluminescence (PL) was employed to determined the emitting characteristics of the samples. Secondary ion mass spectroscopy was used to examine the concentration of the constituents along the growth direction. Convergent beam electron diffraction (CBED) was used to determine the symmetry of the crystal. In addition, the polarity of the samples was also demonstrated by a simpler method of chemical etching in a KOH aqueous solution compared with the analysis of the CBED pattern. Our central results show that the variety of dopants in the GaN buffer layer would determine the polarity of the top GaN layer, which then influence the emitting performance of the InGaN/GaN superlattices.

原文	English
頁面	174-178
頁數	5
出版狀態	Published - 2003 1月 1
事件	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States 持續時間: 2003 10月 12 → 2003 10月 17

Other

Other	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
國家/地區	United States
城市	Orlando,FL
期間	03-10-12 → 03-10-17

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電化學

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Lai, Y. L., Chen, R., Liu, C. P., & Lin, Y. W. (2003). Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures. 174-178. 論文發表於 State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Lai, Yen Lin ; Chen, Regime ; Liu, Chuan Pu 等. / Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures. 論文發表於 State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.5 p.

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title = "Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures",

abstract = "The polarity of InGaN/GaN supeilattice structures grown on c-plane sapphires by metal-organic chemical vapor deposition (MOCVD) comprised of an GaN buffer layer doped with different impurities is studied. Photoluminescence (PL) was employed to determined the emitting characteristics of the samples. Secondary ion mass spectroscopy was used to examine the concentration of the constituents along the growth direction. Convergent beam electron diffraction (CBED) was used to determine the symmetry of the crystal. In addition, the polarity of the samples was also demonstrated by a simpler method of chemical etching in a KOH aqueous solution compared with the analysis of the CBED pattern. Our central results show that the variety of dopants in the GaN buffer layer would determine the polarity of the top GaN layer, which then influence the emitting performance of the InGaN/GaN superlattices.",

author = "Lai, {Yen Lin} and Regime Chen and Liu, {Chuan Pu} and Lin, {Yo Way}",

year = "2003",

month = jan,

day = "1",

language = "English",

pages = "174--178",

note = "State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

}

Lai, YL, Chen, R, Liu, CP & Lin, YW 2003, 'Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures', 論文發表於 State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 03-10-12 - 03-10-17 頁 174-178.

Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures. / Lai, Yen Lin; Chen, Regime; Liu, Chuan Pu 等.
2003. 174-178 論文發表於 State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

研究成果: Paper › 同行評審

TY - CONF

T1 - Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures

AU - Lai, Yen Lin

AU - Chen, Regime

AU - Liu, Chuan Pu

AU - Lin, Yo Way

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The polarity of InGaN/GaN supeilattice structures grown on c-plane sapphires by metal-organic chemical vapor deposition (MOCVD) comprised of an GaN buffer layer doped with different impurities is studied. Photoluminescence (PL) was employed to determined the emitting characteristics of the samples. Secondary ion mass spectroscopy was used to examine the concentration of the constituents along the growth direction. Convergent beam electron diffraction (CBED) was used to determine the symmetry of the crystal. In addition, the polarity of the samples was also demonstrated by a simpler method of chemical etching in a KOH aqueous solution compared with the analysis of the CBED pattern. Our central results show that the variety of dopants in the GaN buffer layer would determine the polarity of the top GaN layer, which then influence the emitting performance of the InGaN/GaN superlattices.

AB - The polarity of InGaN/GaN supeilattice structures grown on c-plane sapphires by metal-organic chemical vapor deposition (MOCVD) comprised of an GaN buffer layer doped with different impurities is studied. Photoluminescence (PL) was employed to determined the emitting characteristics of the samples. Secondary ion mass spectroscopy was used to examine the concentration of the constituents along the growth direction. Convergent beam electron diffraction (CBED) was used to determine the symmetry of the crystal. In addition, the polarity of the samples was also demonstrated by a simpler method of chemical etching in a KOH aqueous solution compared with the analysis of the CBED pattern. Our central results show that the variety of dopants in the GaN buffer layer would determine the polarity of the top GaN layer, which then influence the emitting performance of the InGaN/GaN superlattices.

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T2 - State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium

Y2 - 12 October 2003 through 17 October 2003

ER -

Lai YL, Chen R, Liu CP, Lin YW. Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures. 2003. 論文發表於 State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures

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