MgZnO/SiO2/ZnO metal-semiconductor-metal dual-band UVA and UVB photodetector with different MgZnO thicknesses by RF magnetron sputter

J. S. Jheng, C. K. Wang, Y. Z. Chiou, S. P. Chang, S. J. Chang

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The MgZnO/SiO2/ZnO metal-semiconductor-metal (MSM) dual-band UVA and UVB photodetectors (PDs) with different MgZnO thicknesses were fabricated by RF sputter. From the dark current, it was found that the PD with 200 nm thick MgZnO had a lower leakage current, which implies less defect density and better crystal quality. Therefore, the FWHM of the X-ray diffraction and grain size of the scanning electron microscope image for PDs with a thicker MgZnO thickness were narrower and larger than those of the others. From the photoluminescence (PL) at room temperature, the main defect types of the MgZnO/SiO2/ZnO thin film included Ov, Oi, and Zni. Then, a variable and voltage-controlled tunable wavelength of UV PD from UVB to UVA can be well accomplished by using a SiO2 blocking layer inserted between the MgZnO and ZnO thin film. Therefore, at a lower and higher bias voltage, the PD with a 200 nm thick MgZnO can detect the UVB and UVA range, respectively.

原文English
文章編號SDDF04
期刊Japanese journal of applied physics
59
發行號SD
DOIs
出版狀態Published - 2020

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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