Micromachined Multilevel Silicon Structure by Anisotropie Wet Etching

Chen Kuei Chung, Chien Chih Lee

研究成果: Article同行評審

摘要

A method for multislevel silicon terraced structure especially with corner compensation to get square corner has been demonstrated. The conventional designs of corner compensation presented with different geometrical layout are for two-level terraced structures. Our mask layout with the grid buffer region is good for square corner formation of multislevel Si(100) terraced structure during KOH anisotropic etching. The grid buffer regions play an important role not only in compromising the etching rate of convex corners at different levels to obtain good square corners, but also in high space efficiency.

原文English
頁(從 - 到)411-414
頁數4
期刊International Journal of Nonlinear Sciences and Numerical Simulation
3
發行號3-4
DOIs
出版狀態Published - 2002 一月 1

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Computational Mechanics
  • Modelling and Simulation
  • Engineering (miscellaneous)
  • Mechanics of Materials
  • Physics and Astronomy(all)
  • Applied Mathematics

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