TY - GEN
T1 - Microscopic study of random dopant fluctuation in silicon nanowire transistors using 3D simulation
AU - Chen, Chun Yu
AU - Lin, Jyi Tsong
AU - Chiang, Meng Hsueh
PY - 2013
Y1 - 2013
N2 - Variability impact of random dopant fluctuation in nanometer-scale silicon nanowire MOSFET is assessed via TCAD numerical simulations. We have simulated ensembles of 629 devices, which differ from each other due to the physical manifestation of the dopant variability in the channel location, including the detailed microscopic pattern of a discrete sphere dopant from drain to source. Based on our study, the variations of leakage and drive currents are not great, but not negligible. Implications from random dopant fluctuation for design are also discussed.
AB - Variability impact of random dopant fluctuation in nanometer-scale silicon nanowire MOSFET is assessed via TCAD numerical simulations. We have simulated ensembles of 629 devices, which differ from each other due to the physical manifestation of the dopant variability in the channel location, including the detailed microscopic pattern of a discrete sphere dopant from drain to source. Based on our study, the variations of leakage and drive currents are not great, but not negligible. Implications from random dopant fluctuation for design are also discussed.
UR - https://www.scopus.com/pages/publications/84874780072
UR - https://www.scopus.com/pages/publications/84874780072#tab=citedBy
U2 - 10.1109/INEC.2013.6466019
DO - 10.1109/INEC.2013.6466019
M3 - Conference contribution
AN - SCOPUS:84874780072
SN - 9781467348416
T3 - Proceedings - Winter Simulation Conference
SP - 267
EP - 270
BT - Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
T2 - 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Y2 - 2 January 2013 through 4 January 2013
ER -