Microstructure of oxidized Ge0.78Si0.12 annealed in a reducing ambient

N. D. Theodore, W. S. Liu, D. Y.C. Lie, T. K. Cams, K. L. Wang

研究成果: Conference article同行評審

摘要

Transmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge0.78Si0.12 layers annealed in a reducing 95% N2 + 5% H2 ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge0.78Si0.12 seeding layer with a Ge-SiO2 matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge0.78Si0.12. Microstructural details of this behavior are investigated.

原文English
頁(從 - 到)127-132
頁數6
期刊Materials Research Society Symposium - Proceedings
379
出版狀態Published - 1995
事件Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
持續時間: 1995 4月 171995 4月 20

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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