摘要
Transmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge0.78Si0.12 layers annealed in a reducing 95% N2 + 5% H2 ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge0.78Si0.12 seeding layer with a Ge-SiO2 matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge0.78Si0.12. Microstructural details of this behavior are investigated.
原文 | English |
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頁(從 - 到) | 127-132 |
頁數 | 6 |
期刊 | Materials Research Society Symposium - Proceedings |
卷 | 379 |
出版狀態 | Published - 1995 |
事件 | Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA 持續時間: 1995 4月 17 → 1995 4月 20 |
All Science Journal Classification (ASJC) codes
- 一般材料科學
- 凝聚態物理學
- 材料力學
- 機械工業