Microstructures, optical and electrical properties of In-doped ZnO thin films prepared by sol-gel method

K. J. Chen, F. Y. Hung, S. J. Chang, Z. S. Hu

研究成果: Article同行評審

76 引文 斯高帕斯(Scopus)

摘要

ZnO and indium-doped ZnO (I x ZO) thin films were prepared on silica-glass substrates by the sol-gel method. The thin films were crystallized at 600 °C and 700 °C for 1 h in 6.9 × 10 -1 Torr under pure O 2 atmosphere. The analyzed results were compared to investigate the structural characteristics and optical properties. The surface morphology of the I x ZO films was different from that of the ZnO films, and showed a thin overlay structure. In addition, the crystallization of I x ZO film was depleted at higher crystallized temperatures. From XRD analysis, the ZnO and I x ZO thin films possessed hexagonal structures. Notably, micro-In 2 O 3 phases were observed in the I x ZO thin films using EDS. Both of In 2 O 3 phases and the crystallization mechanism not only improved the peeling of structure, but also improved the electrical conductivity of I x ZO thin films. For the PL spectrum, the optical property of the I x ZO film was raised at a higher crystallization temperature. Although the In 2 O 3 phases reduced the structural defects of I x ZO thin film, the optical effect of the residual In 3+ was not enhanced completely at higher crystallized temperatures.

原文English
頁(從 - 到)6308-6312
頁數5
期刊Applied Surface Science
255
發行號12
DOIs
出版狀態Published - 2009 四月 1

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 物理與天文學 (全部)
  • 表面和介面
  • 表面、塗料和薄膜

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