ZnO and indium-doped ZnO (I x ZO) thin films were prepared on silica-glass substrates by the sol-gel method. The thin films were crystallized at 600 °C and 700 °C for 1 h in 6.9 × 10 -1 Torr under pure O 2 atmosphere. The analyzed results were compared to investigate the structural characteristics and optical properties. The surface morphology of the I x ZO films was different from that of the ZnO films, and showed a thin overlay structure. In addition, the crystallization of I x ZO film was depleted at higher crystallized temperatures. From XRD analysis, the ZnO and I x ZO thin films possessed hexagonal structures. Notably, micro-In 2 O 3 phases were observed in the I x ZO thin films using EDS. Both of In 2 O 3 phases and the crystallization mechanism not only improved the peeling of structure, but also improved the electrical conductivity of I x ZO thin films. For the PL spectrum, the optical property of the I x ZO film was raised at a higher crystallization temperature. Although the In 2 O 3 phases reduced the structural defects of I x ZO thin film, the optical effect of the residual In 3+ was not enhanced completely at higher crystallized temperatures.
All Science Journal Classification (ASJC) codes
- 化學 (全部)
- 物理與天文學 (全部)