Microwave and power characteristics of AlGaN/GaN/Si high-electron mobility transistors with HfO2 and TiO2 passivation

Yu Shyan Lin, Shin Fu Lin, Wei Chou Hsu

研究成果: Article

3 引文 (Scopus)

摘要

This work presents AlGaN/GaN high-electron mobility transistors (HEMTs) that are grown on silicon. Various passivation layers are deposited on AlGaN/GaN HEMTs. AlGaN/GaN HEMTs were fabricated with TiO2 dielectrics, and their performance was compared with that of unpassivated and that of HfO2-passivated HEMTs. The TiO2-passivated HEMT with a gate length of 1 μm exhibits a maximum extrinsic transconductance of 134.4 mS mm-1, a current-gain cutoff frequency of 10.62 GHz, and a maximum frequency of oscillation of 16.37 GHz. Capping with any of the dielectric materials used herein improves the device performance over that of the unpassivated HEMTs. Additionally, experimental data demonstrate that the use of TiO2 is a favorable alternative to HfO2 passivation. This work is the first to present the microwave power of TiO2-passivated AlGaN/GaN HEMTs.

原文English
文章編號015016
期刊Semiconductor Science and Technology
30
發行號1
DOIs
出版狀態Published - 2015 一月 1

指紋

High electron mobility transistors
high electron mobility transistors
Passivation
passivity
Microwaves
microwaves
Gates (transistor)
Cutoff frequency
Transconductance
Silicon
transconductance
aluminum gallium nitride
cut-off
oscillations
silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

@article{253f66fdc0754b1abeb16cacc8360cfb,
title = "Microwave and power characteristics of AlGaN/GaN/Si high-electron mobility transistors with HfO2 and TiO2 passivation",
abstract = "This work presents AlGaN/GaN high-electron mobility transistors (HEMTs) that are grown on silicon. Various passivation layers are deposited on AlGaN/GaN HEMTs. AlGaN/GaN HEMTs were fabricated with TiO2 dielectrics, and their performance was compared with that of unpassivated and that of HfO2-passivated HEMTs. The TiO2-passivated HEMT with a gate length of 1 μm exhibits a maximum extrinsic transconductance of 134.4 mS mm-1, a current-gain cutoff frequency of 10.62 GHz, and a maximum frequency of oscillation of 16.37 GHz. Capping with any of the dielectric materials used herein improves the device performance over that of the unpassivated HEMTs. Additionally, experimental data demonstrate that the use of TiO2 is a favorable alternative to HfO2 passivation. This work is the first to present the microwave power of TiO2-passivated AlGaN/GaN HEMTs.",
author = "Lin, {Yu Shyan} and Lin, {Shin Fu} and Hsu, {Wei Chou}",
year = "2015",
month = "1",
day = "1",
doi = "10.1088/0268-1242/30/1/015016",
language = "English",
volume = "30",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Microwave and power characteristics of AlGaN/GaN/Si high-electron mobility transistors with HfO2 and TiO2 passivation

AU - Lin, Yu Shyan

AU - Lin, Shin Fu

AU - Hsu, Wei Chou

PY - 2015/1/1

Y1 - 2015/1/1

N2 - This work presents AlGaN/GaN high-electron mobility transistors (HEMTs) that are grown on silicon. Various passivation layers are deposited on AlGaN/GaN HEMTs. AlGaN/GaN HEMTs were fabricated with TiO2 dielectrics, and their performance was compared with that of unpassivated and that of HfO2-passivated HEMTs. The TiO2-passivated HEMT with a gate length of 1 μm exhibits a maximum extrinsic transconductance of 134.4 mS mm-1, a current-gain cutoff frequency of 10.62 GHz, and a maximum frequency of oscillation of 16.37 GHz. Capping with any of the dielectric materials used herein improves the device performance over that of the unpassivated HEMTs. Additionally, experimental data demonstrate that the use of TiO2 is a favorable alternative to HfO2 passivation. This work is the first to present the microwave power of TiO2-passivated AlGaN/GaN HEMTs.

AB - This work presents AlGaN/GaN high-electron mobility transistors (HEMTs) that are grown on silicon. Various passivation layers are deposited on AlGaN/GaN HEMTs. AlGaN/GaN HEMTs were fabricated with TiO2 dielectrics, and their performance was compared with that of unpassivated and that of HfO2-passivated HEMTs. The TiO2-passivated HEMT with a gate length of 1 μm exhibits a maximum extrinsic transconductance of 134.4 mS mm-1, a current-gain cutoff frequency of 10.62 GHz, and a maximum frequency of oscillation of 16.37 GHz. Capping with any of the dielectric materials used herein improves the device performance over that of the unpassivated HEMTs. Additionally, experimental data demonstrate that the use of TiO2 is a favorable alternative to HfO2 passivation. This work is the first to present the microwave power of TiO2-passivated AlGaN/GaN HEMTs.

UR - http://www.scopus.com/inward/record.url?scp=84920376490&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84920376490&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/30/1/015016

DO - 10.1088/0268-1242/30/1/015016

M3 - Article

AN - SCOPUS:84920376490

VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 1

M1 - 015016

ER -