Microwave complementary doped-channel field-effect transistors

Jung Hui Tsai, Shao Yen Chiu, Wen Shiung Lour, Wen Chau Liu, Chien Ming Li, Ning Xing Su, Yi Zhen Wu, Yin Shan Huang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)


In this paper, the device performance and complementary inverter of the InGaP/InGaAs/GaAs doped-channel field-effect transistors (DCFETs) by two-dimensional semiconductor simulation are demonstrated. Due to the relatively large conduction (valance) band discontinuity at InGaP/InGaAs interface, it provides good confinement effect for transporting carriers in InGaAs channel layer for the n-channel (p-channel) device. The large gate turn-on voltage is achieved due to the employment of the wide energy-gap InGaP material as gate layer. The ft and fmax are of 6.5 (2.1) and 25 (5) GHz for the n-channel (p-channel) device. Furthermore, the co-integrated structures, by the combination of n- and p-channel field-effect transistors, could form a complementary inverter and the relatively large noise margins are achieved.

頁(從 - 到)33-38
期刊Superlattices and Microstructures
出版狀態Published - 2009 1月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程


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