TY - JOUR
T1 - Microwave dielectric properties and microstructures of La(Mg 1/2Ti1/2)O3 with CuO-doped
AU - Chen, Yuan Bin
AU - Huang, Cheng Liang
AU - Lo, Ching Wen
N1 - Funding Information:
The authors would like to thank the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract No. NSC-93-2213-E-006-038.
PY - 2006/3/15
Y1 - 2006/3/15
N2 - The effects of sintering aid addition on the microstructures and microwave dielectric properties of La(Mg1/2Ti1/2)O3 ceramics were investigated. CuO was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg1/2Ti1/2)O 3 ceramics. With CuO addition, the densification temperature of La(Mg1/2Ti1/2)O3 can be effectively reduced from 1600 to 1300-1500 °C. It is found that doping of CuO (1-4 wt%) can significantly improve the density and dielectric properties of La(Mg 1/2Ti1/2)O3 ceramics. Second phases were observed at the level of 1-4 wt% CuO additions. The quality factor Qxf was strongly dependent upon the amount of additions. Qxf values of 33,800 and 10,600 GHz could be obtained at 1300-1500 °C with 1 and 4 wt% CuO addition, respectively. During all addition ranges, the relative dielectric constants were different and ranged from 25.89 to 29.63. The temperature coefficient varies from -52.11 to -68.22 ppm/°C.
AB - The effects of sintering aid addition on the microstructures and microwave dielectric properties of La(Mg1/2Ti1/2)O3 ceramics were investigated. CuO was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg1/2Ti1/2)O 3 ceramics. With CuO addition, the densification temperature of La(Mg1/2Ti1/2)O3 can be effectively reduced from 1600 to 1300-1500 °C. It is found that doping of CuO (1-4 wt%) can significantly improve the density and dielectric properties of La(Mg 1/2Ti1/2)O3 ceramics. Second phases were observed at the level of 1-4 wt% CuO additions. The quality factor Qxf was strongly dependent upon the amount of additions. Qxf values of 33,800 and 10,600 GHz could be obtained at 1300-1500 °C with 1 and 4 wt% CuO addition, respectively. During all addition ranges, the relative dielectric constants were different and ranged from 25.89 to 29.63. The temperature coefficient varies from -52.11 to -68.22 ppm/°C.
UR - https://www.scopus.com/pages/publications/33344466382
UR - https://www.scopus.com/pages/publications/33344466382#tab=citedBy
U2 - 10.1016/j.mseb.2005.11.027
DO - 10.1016/j.mseb.2005.11.027
M3 - Article
AN - SCOPUS:33344466382
SN - 0921-5107
VL - 128
SP - 98
EP - 102
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1-3
ER -