TY - JOUR
T1 - Microwave dielectric properties of (1-x)CaTiO3-xNd(Mg 1/2Ti1/2)O3 ceramics system
AU - Huang, Cheng Liang
AU - Chen, Yuan Bin
AU - Lo, Ching Wen
PY - 2003/1/1
Y1 - 2003/1/1
N2 - The microwave dielectric properties of (1-x)CaTiO3-xNd(Mgi 1/2Ti1/2)O3(0.1≤x≤1.0) have been investigated. The system forms a solid solution throughout the entire compositional range. The dielectric constant decreases from 152 to 27 as x varies from 0.1 to 1.0. In the (1-x)CaTiO3-xNd(Mgi 1/2Ti1/2)O3 system, the microwave dielectric properties can be effectively controlled by varying the x value. A maximum quality factor Qxf = 43000GHz (where f is the resonant frequency) was achieved for samples with x=0.9, although the dielectric properties varied with sintering temperature. The Qxf value of (1-x)CaTiO3-xNd(Mgi 1/2Ti1/2)O3 almost increased up to 1500°C , after which it decreased. At 1400°C, 0.1CaTiO3-0.9Nd(Mg 1/2Ti1/2)O3 ceramics gives a dielectric constant εr of 42 , a Qxf value of 35000 (GHz) and a τf value of -10 (ppm/°C).
AB - The microwave dielectric properties of (1-x)CaTiO3-xNd(Mgi 1/2Ti1/2)O3(0.1≤x≤1.0) have been investigated. The system forms a solid solution throughout the entire compositional range. The dielectric constant decreases from 152 to 27 as x varies from 0.1 to 1.0. In the (1-x)CaTiO3-xNd(Mgi 1/2Ti1/2)O3 system, the microwave dielectric properties can be effectively controlled by varying the x value. A maximum quality factor Qxf = 43000GHz (where f is the resonant frequency) was achieved for samples with x=0.9, although the dielectric properties varied with sintering temperature. The Qxf value of (1-x)CaTiO3-xNd(Mgi 1/2Ti1/2)O3 almost increased up to 1500°C , after which it decreased. At 1400°C, 0.1CaTiO3-0.9Nd(Mg 1/2Ti1/2)O3 ceramics gives a dielectric constant εr of 42 , a Qxf value of 35000 (GHz) and a τf value of -10 (ppm/°C).
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U2 - 10.1557/proc-783-b5.13
DO - 10.1557/proc-783-b5.13
M3 - Conference article
AN - SCOPUS:3042668782
SN - 0272-9172
VL - 783
SP - 53
EP - 58
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Materials, Integration and Packaging Issues for High - Frequency Devices
Y2 - 1 December 2003 through 3 December 2003
ER -