MICROWAVE PLASMA ETCHING OF PHOTORESIST AND POLYIMIDE IN AIR AND OXYGEN.

Yon-Hua Tzeng, T. H. Lin, M. A. Belser, T. A. Roppel

研究成果: Conference contribution

摘要

A microwave oven has been modified and used as a microwave plasma generator to generate a burst of microwave excitation at 2. 45 GHz and at a repetition rate of 60 Hz. This plasma is characterized and then applied to etch photoresist and polyimide in a downstream plasma reactor apparatus. Photoresist and polyimide etch rates on the order of micrometers can be achieved in the downstream of the pulsed 625-W microwave plasma. With this capability standard photoresist and polyimide can be etched in a couple of minutes.

原文English
主出版物標題Unknown Host Publication Title
發行者IEEE
頁面155-160
頁數6
出版狀態Published - 1987

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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