Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors

Shin Mou; Adam Petschke; Qi Lou; Shun Lien Chuang; Jian V. Li; Cory J. Hill

doi:10.1063/1.2909538

Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors

Shin Mou, Adam Petschke, Qi Lou, Shun Lien Chuang, Jian V. Li, Cory J. Hill

航空太空工程學系

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9 引文斯高帕斯（Scopus）

摘要

A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.

原文	English
文章編號	153505
期刊	Applied Physics Letters
卷	92
發行號	15
DOIs	https://doi.org/10.1063/1.2909538
出版狀態	Published - 2008

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

UN SDG

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10.1063/1.2909538

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title = "Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors",

abstract = "A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.",

author = "Shin Mou and Adam Petschke and Qi Lou and Chuang, {Shun Lien} and Li, {Jian V.} and Hill, {Cory J.}",

note = "Funding Information: The work at University of Illinois was supported by Army Research Office under Grant No. ARMY W911NF-06-1-0353. Additional research described in this letter was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.",

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AU - Mou, Shin

AU - Petschke, Adam

AU - Lou, Qi

AU - Chuang, Shun Lien

AU - Li, Jian V.

AU - Hill, Cory J.

N1 - Funding Information: The work at University of Illinois was supported by Army Research Office under Grant No. ARMY W911NF-06-1-0353. Additional research described in this letter was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.

PY - 2008

Y1 - 2008

N2 - A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.

AB - A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.

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ER -

Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors

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