Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors

Shin Mou; Adam Petschke; Qi Lou; Shun Lien Chuang; Jian V. Li; Cory J. Hill

doi:10.1063/1.2909538

Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors

Shin Mou
, Adam Petschke
, Qi Lou
, Shun Lien Chuang
, Jian V. Li
, Cory J. Hill

航空太空工程學系

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.

原文	English
文章編號	153505
期刊	Applied Physics Letters
卷	92
發行號	15
DOIs	https://doi.org/10.1063/1.2909538
出版狀態	Published - 2008

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All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.2909538

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@article{d47b4b6c1d0940298261428dd1da88b2,

title = "Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors",

abstract = "A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7\%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.",

author = "Shin Mou and Adam Petschke and Qi Lou and Chuang, \{Shun Lien\} and Li, \{Jian V.\} and Hill, \{Cory J.\}",

note = "Funding Information: The work at University of Illinois was supported by Army Research Office under Grant No. ARMY W911NF-06-1-0353. Additional research described in this letter was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.",

year = "2008",

doi = "10.1063/1.2909538",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

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TY - JOUR

T1 - Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors

AU - Mou, Shin

AU - Petschke, Adam

AU - Lou, Qi

AU - Chuang, Shun Lien

AU - Li, Jian V.

AU - Hill, Cory J.

N1 - Funding Information: The work at University of Illinois was supported by Army Research Office under Grant No. ARMY W911NF-06-1-0353. Additional research described in this letter was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.

PY - 2008

Y1 - 2008

N2 - A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.

AB - A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.

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UR - https://www.scopus.com/pages/publications/42349087922#tab=citedBy

U2 - 10.1063/1.2909538

DO - 10.1063/1.2909538

M3 - Article

AN - SCOPUS:42349087922

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153505

ER -

Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors

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