Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN

P. V. Wadekar, C. W. Chang, Y. J. Zheng, S. S. Guo, W. C. Hsieh, C. M. Cheng, M. H. Ma, W. C. Lai, J. K. Sheu, Q. Y. Chen, L. W. Tu

研究成果: Article

4 引文 (Scopus)

摘要

In this work, we demonstrate room temperature ferromagnetism in nonpolar, m-plane manganese doped gallium nitride (m-GaN:Mn) epitaxial thin films synthesized using plasma-assisted molecular beam epitaxy on nonpolar, m-plane sapphire (Al 2 O 3 ) substrates. We observed that Mn doping concentration plays a key role in stabilizing the valence state of Mn ions thereby influencing the magnetic and transport properties. Chemical characterization by X-ray photoelectron spectroscopy, X-ray absorption near edge spectra, and energy dispersive X-ray spectroscopy affirm homogeneous valence state Mn +3 in lightly doped samples, while higher doping levels cause a heterogeneous Mn +0 and Mn +2 mixed valence states. Magnetic measurements indicate that films with low doping levels show the signature of room temperature ferromagnetism, while films with higher doping show antiferromagnetic/spin glass behavior besides the indication of MnGa alloys. Temperature dependent resistivity measurements show that both the samples are semiconducting with deep level defect states. Our findings suggest the possibility of incorporating spin functionality in non-polar optoelectronic devices.

原文English
頁(從 - 到)693-698
頁數6
期刊Applied Surface Science
473
DOIs
出版狀態Published - 2019 四月 15

指紋

Ferromagnetism
ferromagnetism
Doping (additives)
valence
room temperature
Gallium nitride
Temperature
x rays
Spin glass
Aluminum Oxide
gallium nitrides
Epitaxial films
Magnetic variables measurement
X ray absorption
Manganese
optoelectronic devices
Molecular beam epitaxy
Sapphire
Optoelectronic devices
Transport properties

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

引用此文

Wadekar, P. V., Chang, C. W., Zheng, Y. J., Guo, S. S., Hsieh, W. C., Cheng, C. M., ... Tu, L. W. (2019). Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN. Applied Surface Science, 473, 693-698. https://doi.org/10.1016/j.apsusc.2018.12.163
Wadekar, P. V. ; Chang, C. W. ; Zheng, Y. J. ; Guo, S. S. ; Hsieh, W. C. ; Cheng, C. M. ; Ma, M. H. ; Lai, W. C. ; Sheu, J. K. ; Chen, Q. Y. ; Tu, L. W. / Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN. 於: Applied Surface Science. 2019 ; 卷 473. 頁 693-698.
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title = "Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN",
abstract = "In this work, we demonstrate room temperature ferromagnetism in nonpolar, m-plane manganese doped gallium nitride (m-GaN:Mn) epitaxial thin films synthesized using plasma-assisted molecular beam epitaxy on nonpolar, m-plane sapphire (Al 2 O 3 ) substrates. We observed that Mn doping concentration plays a key role in stabilizing the valence state of Mn ions thereby influencing the magnetic and transport properties. Chemical characterization by X-ray photoelectron spectroscopy, X-ray absorption near edge spectra, and energy dispersive X-ray spectroscopy affirm homogeneous valence state Mn +3 in lightly doped samples, while higher doping levels cause a heterogeneous Mn +0 and Mn +2 mixed valence states. Magnetic measurements indicate that films with low doping levels show the signature of room temperature ferromagnetism, while films with higher doping show antiferromagnetic/spin glass behavior besides the indication of MnGa alloys. Temperature dependent resistivity measurements show that both the samples are semiconducting with deep level defect states. Our findings suggest the possibility of incorporating spin functionality in non-polar optoelectronic devices.",
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Wadekar, PV, Chang, CW, Zheng, YJ, Guo, SS, Hsieh, WC, Cheng, CM, Ma, MH, Lai, WC, Sheu, JK, Chen, QY & Tu, LW 2019, 'Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN', Applied Surface Science, 卷 473, 頁 693-698. https://doi.org/10.1016/j.apsusc.2018.12.163

Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN. / Wadekar, P. V.; Chang, C. W.; Zheng, Y. J.; Guo, S. S.; Hsieh, W. C.; Cheng, C. M.; Ma, M. H.; Lai, W. C.; Sheu, J. K.; Chen, Q. Y.; Tu, L. W.

於: Applied Surface Science, 卷 473, 15.04.2019, p. 693-698.

研究成果: Article

TY - JOUR

T1 - Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN

AU - Wadekar, P. V.

AU - Chang, C. W.

AU - Zheng, Y. J.

AU - Guo, S. S.

AU - Hsieh, W. C.

AU - Cheng, C. M.

AU - Ma, M. H.

AU - Lai, W. C.

AU - Sheu, J. K.

AU - Chen, Q. Y.

AU - Tu, L. W.

PY - 2019/4/15

Y1 - 2019/4/15

N2 - In this work, we demonstrate room temperature ferromagnetism in nonpolar, m-plane manganese doped gallium nitride (m-GaN:Mn) epitaxial thin films synthesized using plasma-assisted molecular beam epitaxy on nonpolar, m-plane sapphire (Al 2 O 3 ) substrates. We observed that Mn doping concentration plays a key role in stabilizing the valence state of Mn ions thereby influencing the magnetic and transport properties. Chemical characterization by X-ray photoelectron spectroscopy, X-ray absorption near edge spectra, and energy dispersive X-ray spectroscopy affirm homogeneous valence state Mn +3 in lightly doped samples, while higher doping levels cause a heterogeneous Mn +0 and Mn +2 mixed valence states. Magnetic measurements indicate that films with low doping levels show the signature of room temperature ferromagnetism, while films with higher doping show antiferromagnetic/spin glass behavior besides the indication of MnGa alloys. Temperature dependent resistivity measurements show that both the samples are semiconducting with deep level defect states. Our findings suggest the possibility of incorporating spin functionality in non-polar optoelectronic devices.

AB - In this work, we demonstrate room temperature ferromagnetism in nonpolar, m-plane manganese doped gallium nitride (m-GaN:Mn) epitaxial thin films synthesized using plasma-assisted molecular beam epitaxy on nonpolar, m-plane sapphire (Al 2 O 3 ) substrates. We observed that Mn doping concentration plays a key role in stabilizing the valence state of Mn ions thereby influencing the magnetic and transport properties. Chemical characterization by X-ray photoelectron spectroscopy, X-ray absorption near edge spectra, and energy dispersive X-ray spectroscopy affirm homogeneous valence state Mn +3 in lightly doped samples, while higher doping levels cause a heterogeneous Mn +0 and Mn +2 mixed valence states. Magnetic measurements indicate that films with low doping levels show the signature of room temperature ferromagnetism, while films with higher doping show antiferromagnetic/spin glass behavior besides the indication of MnGa alloys. Temperature dependent resistivity measurements show that both the samples are semiconducting with deep level defect states. Our findings suggest the possibility of incorporating spin functionality in non-polar optoelectronic devices.

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