Mo-Doped SnO2 Quantum Dots Dispersed Over Reduced Graphene Oxide Sheets as an Efficient Anode Material

Yong Cun Huang, Sanjaya Brahma, Chia Chin Chang, Jow Lay Huang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)


We explore the effect of Mo doping over the large enhancement of electrochemical property of Mo-doped SnO2 quantum dots (3–5 nm) grown over rGO (reduced graphene oxide) sheets by a soft chemical process in ambient conditions. The composites were prepared over a range of Mo doping concentrations (0–10%) and 5% Mo doping had achieved the best energy storage characteristics. The capacity of the active material could reach ∼851 mAh g−1 (@ 78 mA g−1) in the beginning and that retained ∼89% (∼758 mAh g−1) with superior cyclic stability (100 cycles) and rate capability (506 mAh g−1 @ ∼1.5 A g−1). The addition of the reductant of 0.06 mol during the synthesis procedure led to further improvement of the capacity to ∼875 mAh g−1 (∼92% retention) and the rate capability (∼587 mAh g−1). These impressive results are ascribed to the distribution of Mo-doped SnO2 QDs, doping of Mo6+ at Sn4+ lattice sites providing more electrons for easy electrical transport, reduction of GO (graphene oxide) to rGO. Mo doping led to the decline in the charge transfer resistance (Rct) from 14.99 Ω for un-doped SnO2/rGO to 14.09 Ω (2.5%), 11.61 Ω (5%), and 11.4 Ω (10%) and promote the electrochemical property of the composite. A simple room-temperature synthesis process was used to produce Mo-doped SnO2/rGO nanocomposite and can be employed for the production of many other oxides and their composites for interesting applications.

期刊Journal of Electrochemical Energy Conversion and Storage
出版狀態Published - 2022 2月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 能源工程與電力技術
  • 材料力學
  • 機械工業


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