An In0.9 Ga0.1 P/In0.75 Ga0.53 Ga0.47 As/InP heterostructure grown by low-prssure metal-organic chemical vapor deposition exhibits a mobility as high as 7910 cm2V-1s-1 with a two-dimensional electron gas (2DEG) concentration of 3.35 × 1012 cm-2 at 300 K (99 300 cm2 V-1 s-1, 1.76 × 1012 cm-2 at 77 K). Photoluminescence analysis shows good carrier confinement in this structure.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry