Mobility enhancement in a highly strained δ-doped In0.9 Ga0.1 P/In0.75 Ga0.25 As/In0.53 Ga0.47 As/InP heterostructure

R. T. Hsu, W. Lin, M. J. Kao, Y. H. Wu, W. C. Hsu

研究成果: Article同行評審


An In0.9 Ga0.1 P/In0.75 Ga0.53 Ga0.47 As/InP heterostructure grown by low-prssure metal-organic chemical vapor deposition exhibits a mobility as high as 7910 cm2V-1s-1 with a two-dimensional electron gas (2DEG) concentration of 3.35 × 1012 cm-2 at 300 K (99 300 cm2 V-1 s-1, 1.76 × 1012 cm-2 at 77 K). Photoluminescence analysis shows good carrier confinement in this structure.

頁(從 - 到)164-166
期刊Thin Solid Films
出版狀態Published - 1994 六月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

指紋 深入研究「Mobility enhancement in a highly strained δ-doped In<sub>0.9</sub> Ga<sub>0.1</sub> P/In<sub>0.75</sub> Ga<sub>0.25</sub> As/In<sub>0.53</sub> Ga<sub>0.47</sub> As/InP heterostructure」主題。共同形成了獨特的指紋。