A novel double δ-doped heterostructure employing symmetric graded InGaAs quantum wells as the active channel grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) has been successfully fabricated. The proposed symmetrically graded InGaAs pseudomorphic structure manifests significantly improved electron mobility as high as 5300 (26 000) cm 2/V s at 300 (77) K due to superior confinement and to the lower interface roughness scattering at GaAs/InGaAs heterointerfaces. We also carried out photoluminescence (PL) spectra and secondary-ion mass spectrometry (SIMS) profiles to confirm the quality of the proposed structures.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)