Highly strained δ- and uniformly doped InP/InGaAs/InP high-electron-mobility transistor (HEMT) structures with InGaP cap layers were fabricated. Photoluminescence (PL), secondary ion mass spectrometry (SIMS) and Hall measurement were used to analyse these two structures. The δ-doped HEMT structure revealed higher mobilities than the uniformly doped HEMT's, especially at low temperature, due to the reduction of impurity scattering. The carrier concentrations and mobilities at 77 K were 2.7× 1012 cm-2 and 57861 cm2/v·s for the uniformly doped structure, and were 1.8× 1012 cm-2 and 99300 cm2/v·s for the δ-doped structure.
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)