Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices

Chien Hung Chen, Yiming Li, Chieh Yang Chen, Yu Yu Chen, Sheng Chia Hsu, Wen Tsung Huang, Sheng Yuan Chu

研究成果: Article

11 引文 斯高帕斯(Scopus)

摘要

In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (1 1 0) and (1 0 0) orientations of the devices. We further analyze four devices with different surface roughness along (1 0 0) and (1 0 0) orientations to demonstrate the influence of surface roughness on the total effective mobility.

原文English
頁(從 - 到)357-359
頁數3
期刊Microelectronic Engineering
109
DOIs
出版狀態Published - 2013 五月 20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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