摘要
InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 2253-2256 |
| 頁數 | 4 |
| 期刊 | Physica Status Solidi C: Conferences |
| 發行號 | 7 |
| DOIs | |
| 出版狀態 | Published - 2003 十二月 1 |
| 事件 | 5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan 持續時間: 2003 五月 25 → 2003 五月 30 |
指紋
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
引用此文
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MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates. / Chang, Shoou-Jinn; Su, Y. K.; Lin, Yu-Cheng; Chuang, Wen-Kuei; Chang, C. S.; Sheu, Jinn-Kong; Wen, T. C.; Shei, S. C.; Kuo, C. W.; Fang, D. H.
於: Physica Status Solidi C: Conferences, 編號 7, 01.12.2003, p. 2253-2256.研究成果: Conference article
TY - JOUR
T1 - MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates
AU - Chang, Shoou-Jinn
AU - Su, Y. K.
AU - Lin, Yu-Cheng
AU - Chuang, Wen-Kuei
AU - Chang, C. S.
AU - Sheu, Jinn-Kong
AU - Wen, T. C.
AU - Shei, S. C.
AU - Kuo, C. W.
AU - Fang, D. H.
PY - 2003/12/1
Y1 - 2003/12/1
N2 - InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.
AB - InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.
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U2 - 10.1002/pssc.200303355
DO - 10.1002/pssc.200303355
M3 - Conference article
AN - SCOPUS:20044381725
SP - 2253
EP - 2256
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 7
ER -