MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

Shoou-Jinn Chang, Y. K. Su, Yu-Cheng Lin, Wen-Kuei Chuang, C. S. Chang, Jinn-Kong Sheu, T. C. Wen, S. C. Shei, C. W. Kuo, D. H. Fang

研究成果: Conference article同行評審

5 引文 斯高帕斯(Scopus)

摘要

InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.

原文English
頁(從 - 到)2253-2256
頁數4
期刊Physica Status Solidi C: Conferences
發行號7
DOIs
出版狀態Published - 2003
事件5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
持續時間: 2003 五月 252003 五月 30

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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