InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.
|頁（從 - 到）||2253-2256|
|期刊||Physica Status Solidi C: Conferences|
|出版狀態||Published - 2003|
|事件||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
持續時間: 2003 5月 25 → 2003 5月 30
All Science Journal Classification (ASJC) codes