MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

Shoou-Jinn Chang; Y. K. Su; Yu-Cheng Lin; Wen-Kuei Chuang; C. S. Chang; Jinn-Kong Sheu; T. C. Wen; S. C. Shei; C. W. Kuo; D. H. Fang

doi:10.1002/pssc.200303355

MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

Shoou-Jinn Chang, Y. K. Su, Yu-Cheng Lin, Wen-Kuei Chuang, C. S. Chang, Jinn-Kong Sheu, T. C. Wen, S. C. Shei, C. W. Kuo, D. H. Fang

研究成果: Conference article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.

原文	English
頁（從 - 到）	2253-2256
頁數	4
期刊	Physica Status Solidi C: Conferences
發行號	7
DOIs	https://doi.org/10.1002/pssc.200303355
出版狀態	Published - 2003
事件	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan 持續時間: 2003 五月 25 → 2003 五月 30

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200303355

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title = "MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates",

abstract = "InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.",

author = "Shoou-Jinn Chang and Su, {Y. K.} and Yu-Cheng Lin and Wen-Kuei Chuang and Chang, {C. S.} and Jinn-Kong Sheu and Wen, {T. C.} and Shei, {S. C.} and Kuo, {C. W.} and Fang, {D. H.}",

year = "2003",

doi = "10.1002/pssc.200303355",

language = "English",

pages = "2253--2256",

journal = "Physica Status Solidi C: Conferences",

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TY - JOUR

T1 - MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Lin, Yu-Cheng

AU - Chuang, Wen-Kuei

AU - Chang, C. S.

AU - Sheu, Jinn-Kong

AU - Wen, T. C.

AU - Shei, S. C.

AU - Kuo, C. W.

AU - Fang, D. H.

PY - 2003

Y1 - 2003

N2 - InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.

AB - InGaN/GaN blue light emitting diodes (LEDs) prepared on both patterned and conventional sapphire substrates were fabricated. Atomic force microscopy (AFM) images show the micro surface roughness could be observed only from the LEDs prepared on patterned substrates. It was also found that electroluminescence (EL) intensity of LEDs grown on patterned sapphire substrate was about 50% larger than that prepared on conventional sapphire substrates. Reliability of LEDs grown on patterned sapphire substrates was also found to be better.

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U2 - 10.1002/pssc.200303355

DO - 10.1002/pssc.200303355

M3 - Conference article

AN - SCOPUS:20044381725

SP - 2253

EP - 2256

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1610-1634

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -