Modeling and experimental analysis in excimer-laser crystallization of a-Si films

Yu Ru Chen, Chien Hung Chang, Long-Sun Chao

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)


In this work, the excimer-laser-induced crystallization of amorphous silicon (a-Si) films was investigated numerically and experimentally. The basic structure is a silicon film on a glass substrate. Besides, the effect of an SiO2 buffer layer located between them was also studied. In the microstructure analysis of the laser-irradiated area, the critical fluences (full-melt threshold, Fc) between the partial-melting and complete-melting regimes can be found from the grain size distribution varying with laser intensity. An efficient two-dimensional numerical model was developed to predict the critical fluences (Fc) and the transient distribution of temperature during the laser heating of a-Si films. The Fc's obtained from the simulation results of the proposed model agree fairly well with those from the experimental ones reported in the literature and acquired in this research.

頁(從 - 到)199-202
期刊Journal of Crystal Growth
發行號1 SPEC. ISS.
出版狀態Published - 2007 五月 1

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學


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