Modeling and experimental analysis in excimer-laser crystallization of a-Si films

Yu Ru Chen, Chien Hung Chang, Long-Sun Chao

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

In this work, the excimer-laser-induced crystallization of amorphous silicon (a-Si) films was investigated numerically and experimentally. The basic structure is a silicon film on a glass substrate. Besides, the effect of an SiO2 buffer layer located between them was also studied. In the microstructure analysis of the laser-irradiated area, the critical fluences (full-melt threshold, Fc) between the partial-melting and complete-melting regimes can be found from the grain size distribution varying with laser intensity. An efficient two-dimensional numerical model was developed to predict the critical fluences (Fc) and the transient distribution of temperature during the laser heating of a-Si films. The Fc's obtained from the simulation results of the proposed model agree fairly well with those from the experimental ones reported in the literature and acquired in this research.

原文English
頁(從 - 到)199-202
頁數4
期刊Journal of Crystal Growth
303
發行號1 SPEC. ISS.
DOIs
出版狀態Published - 2007 五月 1

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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