Modeling and simulating the electrical properties of heterostructure-emitter bipolar transistors

Wen-Chau Liu, Wen Shiung Lour, Der Feung Guo, Chung Yih Sun

研究成果: Conference contribution

摘要

We develop a theoretical model related to minority carrier properties to study the current gains of heterostructure-emitter bipolar transistors (HEBTs) which use an AlGaAs layer only for minority carrier confinement to eliminate the problems associated with a conventional single heterojunction bipolar transistor (HBT). In this study, minority carrier properties were described by means of polynominal fit to the previous data. Here, the band-gap shrinkage in heavily doped layers" was also taken into account. Current gains of 55 and 180 which are in agreement with calculated data were experimentally obtained for HEBTs with Al0.3Ga0.7As and Al0.5Ga0.5As confinement layers, respectively. With the reduction of the base width to 0.1 μm, a current gain of around 1000 was expected.

原文English
主出版物標題SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
發行者Institute of Electrical and Electronics Engineers Inc.
頁面69-70
頁數2
ISBN(電子)0780312252, 9780780312258
DOIs
出版狀態Published - 1993 1月 1
事件1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan
持續時間: 1993 3月 61993 3月 7

出版系列

名字SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

Conference

Conference1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
國家/地區Taiwan
城市Taipei
期間93-03-0693-03-07

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料
  • 建模與模擬

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