TY - GEN
T1 - Modeling of Inas/aisb/gasb structures and their valley current components
AU - Liu, M. H.
AU - Houng, M. P.
AU - Wang, Y. H.
N1 - Publisher Copyright:
© 1993 IEEE.
PY - 1993
Y1 - 1993
N2 - Recently the structures consisting of the combinations of InAs and GaSb and/or AlSb have attracted much attention for their potential application in'high frequency and high speed devices. The resonant interband tunneling (RIT) structures [l] and the optoelectronic devices based on the Type TI tunnel heterostructures [Z] were reported. The intresting point in the InAs/AlSb/GaSb structures is the peculiar band lineup of the system: The eonduction band of InAs is energetically lower than the valence band of GaSb, whereas the bandgap of-AlSb covers the GaSb bandgap and most of the InAs bandgap region. Due to the coupling effects between the conduction band and light-hole band, the-transport' mechanisms in the InAslAlSblGaSb system are quite complicated compared with the conventional Type I GaAdAlGaAs systems.
AB - Recently the structures consisting of the combinations of InAs and GaSb and/or AlSb have attracted much attention for their potential application in'high frequency and high speed devices. The resonant interband tunneling (RIT) structures [l] and the optoelectronic devices based on the Type TI tunnel heterostructures [Z] were reported. The intresting point in the InAs/AlSb/GaSb structures is the peculiar band lineup of the system: The eonduction band of InAs is energetically lower than the valence band of GaSb, whereas the bandgap of-AlSb covers the GaSb bandgap and most of the InAs bandgap region. Due to the coupling effects between the conduction band and light-hole band, the-transport' mechanisms in the InAslAlSblGaSb system are quite complicated compared with the conventional Type I GaAdAlGaAs systems.
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U2 - 10.1109/SMS.1993.664572
DO - 10.1109/SMS.1993.664572
M3 - Conference contribution
AN - SCOPUS:85065559700
T3 - SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
SP - 93
EP - 94
BT - SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
Y2 - 6 March 1993 through 7 March 1993
ER -