Modeling of Inas/aisb/gasb structures and their valley current components

M. H. Liu, M. P. Houng, Y. H. Wang

研究成果: Conference contribution

摘要

Recently the structures consisting of the combinations of InAs and GaSb and/or AlSb have attracted much attention for their potential application in'high frequency and high speed devices. The resonant interband tunneling (RIT) structures [l] and the optoelectronic devices based on the Type TI tunnel heterostructures [Z] were reported. The intresting point in the InAs/AlSb/GaSb structures is the peculiar band lineup of the system: The eonduction band of InAs is energetically lower than the valence band of GaSb, whereas the bandgap of-AlSb covers the GaSb bandgap and most of the InAs bandgap region. Due to the coupling effects between the conduction band and light-hole band, the-transport' mechanisms in the InAslAlSblGaSb system are quite complicated compared with the conventional Type I GaAdAlGaAs systems.

原文English
主出版物標題SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
發行者Institute of Electrical and Electronics Engineers Inc.
頁面93-94
頁數2
ISBN(電子)0780312252, 9780780312258
DOIs
出版狀態Published - 1993 一月 1
事件1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan
持續時間: 1993 三月 61993 三月 7

出版系列

名字SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

Conference

Conference1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
國家Taiwan
城市Taipei
期間93-03-0693-03-07

    指紋

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Modelling and Simulation

引用此

Liu, M. H., Houng, M. P., & Wang, Y. H. (1993). Modeling of Inas/aisb/gasb structures and their valley current components. 於 SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation (頁 93-94). [664572] (SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMS.1993.664572