Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

T. K. Chiang, Y. H. Wang, M. P. Houng

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

Short-channel effects on the subthreshold behavior are modeled for fully depleted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 μm.

原文English
頁(從 - 到)123-129
頁數7
期刊Solid-State Electronics
43
發行號1
DOIs
出版狀態Published - 1999

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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