Modification of DLC films for MEMS applications

Franklin Chau Nan Hong, Yoou Bin Guo, Jiun Yau Wang

研究成果: Conference article同行評審

摘要

SiOx-containing DLC films are deposited by plasma enhanced chemical vapor deposition on Si substrate. The effect of SiOx dopants on the stress, adhesion and hydrophobicity of the DLC films are studied. The incorporation of SiOx in the DLC films deposited by using hexamethyldisiloxane (HMDSO) and CH4 mixture reduces the residual stress as well as enhances adhesion of the film on the substrate. Besides, the thermal stability of the film also improves. The incorporation of SiOx in the DLC film, as deposited by using HMDSO/CH4 mixture, can raise the water contact angle from 95°, as for the pure DLC film, to 110°. IR results show that the increase of contact angle is mainly due to the incorporation of a higher concentration of -CH3 group in the HMDSO-deposited films. By adding O2 with HMDSO, the contact angle of the deposited film can be reduced to 27°, showing hydrophilic property. By enhancing the surface roughness, the water contact angle can be further increased to 145° for the hydrophobic films deposited using HMDSO/CH4, and the water contact angle can be further reduced to 3° for the hydrophilic films deposited using HMDSO/O2.

原文English
頁(從 - 到)133-141
頁數9
期刊Proceedings of SPIE - The International Society for Optical Engineering
3875
出版狀態Published - 1999 十二月 1
事件Proceedings of the 1999 Materials and Device Characterization in Micromachinig II - Santa Clara, CA, USA
持續時間: 1999 九月 201999 九月 21

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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