Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material

Y. L. Cheng; Y. L. Wang; Y. L. Wu; C. P. Liu; C. W. Liu; J. K. Lan; M. L. O'Neil; Chyung Ay; M. S. Feng

doi:10.1016/j.tsf.2003.09.006

Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material

Y. L. Cheng, Y. L. Wang, Y. L. Wu, C. P. Liu, C. W. Liu, J. K. Lan, M. L. O'Neil, Chyung Ay, M. S. Feng

研究成果: Conference article › 同行評審

15 引文斯高帕斯（Scopus）

摘要

The low dielectric constant (low-k) of organo-silica-glass (OSG) and fluorine-incorporated OSG (OFSG) materials produced from plasma-enhanced chemical vapor deposition of trimethylsilane are thermally stable to greater than 600°C. FTIR analysis indicates that Si-CH₃ bonds and Si-F bonds remain intact to temperatures well above that normally encountered during integrated circuit manufacture, allowing these materials to maintain a low-k value. While OFSG materials proved to have less hydrolytic resistant than their non-fluorinated analogs during high pressure, high temperature water exposure (pressure cooker test), their leakage current was found to be lower than OSG films before and after wafer exposure. The measured properties of OFSG blanket films suggest that this material is sufficiently robust to ensure stability of reliability after the fabrication.

原文	English
頁（從 - 到）	681-687
頁數	7
期刊	Thin Solid Films
卷	447-448
DOIs	https://doi.org/10.1016/j.tsf.2003.09.006
出版狀態	Published - 2004 1月 30
事件	Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States 持續時間: 2002 4月 28 → 2002 5月 2

All Science Journal Classification (ASJC) codes

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/j.tsf.2003.09.006

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title = "Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material",

abstract = "The low dielectric constant (low-k) of organo-silica-glass (OSG) and fluorine-incorporated OSG (OFSG) materials produced from plasma-enhanced chemical vapor deposition of trimethylsilane are thermally stable to greater than 600°C. FTIR analysis indicates that Si-CH3 bonds and Si-F bonds remain intact to temperatures well above that normally encountered during integrated circuit manufacture, allowing these materials to maintain a low-k value. While OFSG materials proved to have less hydrolytic resistant than their non-fluorinated analogs during high pressure, high temperature water exposure (pressure cooker test), their leakage current was found to be lower than OSG films before and after wafer exposure. The measured properties of OFSG blanket films suggest that this material is sufficiently robust to ensure stability of reliability after the fabrication.",

author = "Cheng, {Y. L.} and Wang, {Y. L.} and Wu, {Y. L.} and Liu, {C. P.} and Liu, {C. W.} and Lan, {J. K.} and O'Neil, {M. L.} and Chyung Ay and Feng, {M. S.}",

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month = jan,

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doi = "10.1016/j.tsf.2003.09.006",

language = "English",

volume = "447-448",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material

AU - Cheng, Y. L.

AU - Wang, Y. L.

AU - Wu, Y. L.

AU - Liu, C. P.

AU - Liu, C. W.

AU - Lan, J. K.

AU - O'Neil, M. L.

AU - Ay, Chyung

AU - Feng, M. S.

PY - 2004/1/30

Y1 - 2004/1/30

N2 - The low dielectric constant (low-k) of organo-silica-glass (OSG) and fluorine-incorporated OSG (OFSG) materials produced from plasma-enhanced chemical vapor deposition of trimethylsilane are thermally stable to greater than 600°C. FTIR analysis indicates that Si-CH3 bonds and Si-F bonds remain intact to temperatures well above that normally encountered during integrated circuit manufacture, allowing these materials to maintain a low-k value. While OFSG materials proved to have less hydrolytic resistant than their non-fluorinated analogs during high pressure, high temperature water exposure (pressure cooker test), their leakage current was found to be lower than OSG films before and after wafer exposure. The measured properties of OFSG blanket films suggest that this material is sufficiently robust to ensure stability of reliability after the fabrication.

AB - The low dielectric constant (low-k) of organo-silica-glass (OSG) and fluorine-incorporated OSG (OFSG) materials produced from plasma-enhanced chemical vapor deposition of trimethylsilane are thermally stable to greater than 600°C. FTIR analysis indicates that Si-CH3 bonds and Si-F bonds remain intact to temperatures well above that normally encountered during integrated circuit manufacture, allowing these materials to maintain a low-k value. While OFSG materials proved to have less hydrolytic resistant than their non-fluorinated analogs during high pressure, high temperature water exposure (pressure cooker test), their leakage current was found to be lower than OSG films before and after wafer exposure. The measured properties of OFSG blanket films suggest that this material is sufficiently robust to ensure stability of reliability after the fabrication.

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U2 - 10.1016/j.tsf.2003.09.006

DO - 10.1016/j.tsf.2003.09.006

M3 - Conference article

AN - SCOPUS:1342323628

SN - 0040-6090

VL - 447-448

SP - 681

EP - 687

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of the 30th International Conference on Metallurgie

Y2 - 28 April 2002 through 2 May 2002

ER -

Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material

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