Molecular beam epitaxially grown circular U-groove barrier transistor

C. Y. Chang, Yeong-Her Wang, Wen-Chau Liu, S. A. Liao, K. Y. Cheng

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A new version of simple GaAs n+-n-δ(p+)-n- n+ ultrathin base transistor with U-groove base contact is demonstrated by molecular beam epitaxy which possesses a circular mesa etched base. The potential barrier height can be directly modulated by the applied base voltage and thus the current can traverse over the barrier by thermionic emission. It is a voltage-controlled device. Its transconductance increases with increasing collector-emitter and base-emitter voltage. The collector current density of the present device is larger than 1.5 kA/cm2 and the transconductance is larger than 200 mS/mm, which are larger than those of the previously reported V-groove device.

原文English
頁(從 - 到)1084-1086
頁數3
期刊Applied Physics Letters
46
發行號11
DOIs
出版狀態Published - 1985 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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