Molecular dynamics simulation for nanoscale deep indentation of a copper substrate by single-walled carbon nanotube tips

Jin Yuan Hsieh, Lin S. Huang, Chuan Chen, Hsu Cheng Lo, Chi Chuan Hwang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Deep nanoindentation of a copper substrate by single-walled carbon nanotubes (SWCNTs) has been analyzed using molecular dynamics simulations. Three categories of SWCNTs and their relationship with temperature and nanotube length have been extensively investigated. The results of this comprehensive quantitative analysis for deep indentation demonstrate that only SWCNTs with relatively short lengths can indent into a substrate up to a desired depth without buckling. Most notably, a permanent hollow hole with a high aspect ratio will be produced on the copper substrate, while copper atoms in close proximity to the hole are only slightly disordered.

原文English
文章編號415701
期刊Nanotechnology
18
發行號41
DOIs
出版狀態Published - 2007 10月 17

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 一般化學
  • 一般材料科學
  • 材料力學
  • 機械工業
  • 電氣與電子工程

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