Molecular dynamics simulation of sputter trench-filling morphology in damascene process

Shin Pon Ju, Cheng I. Weng, Jee Gong Chang, Chi Chuan Hwang

研究成果: Conference article同行評審

19 引文 斯高帕斯(Scopus)

摘要

The use of molecular dynamics simulation to study the influence of process parameters on sputter-trench-filling morphologies in the damascene process was presented. A three-dimensional model of the trench comprising of a Ti film and thermal control layer was developed. The interatomic forces existing between the atoms were simulated by tight-binding potential method. It was found that the trench filling patterns were influenced by the incident energy, and filling pattern changed to an ideal one at a higher incident energy.

原文English
頁(從 - 到)946-955
頁數10
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
20
發行號3
DOIs
出版狀態Published - 2002 5月
事件20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
持續時間: 2001 10月 12001 10月 3

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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