Monolithic enhancement-mode and depletion-mode GaN-based MOSHEMTs

Ching Ting Lee, Jhe Hao Chang, Chun Yen Tseng

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)


GaN-based metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) with outstanding properties of high operation speed and high breakdown voltage are promising for high frequency switching operation in ICs. To further develop the GaN-based digital ICs, the AlGaN/GaN MOSHEMT inverters integrated with the enhancement/depletion-mode (E/D-mode) transistors were investigated. In this work, the ferroelectric LiNbO3 (LNO) gate oxide layer and the photoelectrochemical (PEC)-recessed structure were simultaneously utilized to fabricate the critical E-mode AlGaN/GaN MOSHEMTs. Among the ferroelectric materials, the high dielectric constant LNO film with the larger spontaneous polarization of 80 μC/cm2, the wider bandgap of 3.9 eV, and the lower interface state density on the GaN-based semiconductor was beneficial to the modulation of the two-dimensional electron gas (2DEG) channel and the reduction of the gate leakage current. Besides, using the PEC-recessed structure could improve the transconductance of the E-mode transistors and adjust the operation current of the D-mode transistors without destroying the etched AlGaN surface. Instead of the typical tuning area size method, the PEC etching method was demonstrated in this work to adjust the current ratio (β) of the E/D-mode transistors with keeping the matched area size for the miniaturization of the AlGaN/GaN MOSHEMT inverters. From the voltage transfer curve, the corresponded VOUT was equaled to VIN = VDD/2 = 2.5 V, and the output swing were about 4.9 Vp-p as the input signal was 5 Vp-p. It revealed that the resulting AlGaN/GaN MOSHEMT inverter with the β of 25 was operated as a high performance un-skewed inverter.

主出版物標題Gallium Nitride Materials and Devices XI
編輯Yasushi Nanishi, Hiroshi Fujioka, Ulrich T. Schwarz, Jen-Inn Chyi, Hadis Morko�, Jong-In Shim
出版狀態Published - 2016 一月 1
事件Gallium Nitride Materials and Devices XI - San Francisco, United States
持續時間: 2016 二月 152016 二月 18


名字Proceedings of SPIE - The International Society for Optical Engineering


OtherGallium Nitride Materials and Devices XI
國家United States
城市San Francisco

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • 引用此

    Lee, C. T., Chang, J. H., & Tseng, C. Y. (2016). Monolithic enhancement-mode and depletion-mode GaN-based MOSHEMTs. 於 Y. Nanishi, H. Fujioka, U. T. Schwarz, J-I. Chyi, H. Morko�, & J-I. Shim (編輯), Gallium Nitride Materials and Devices XI [97480Z] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9748). SPIE.