Monolithic integration and performance of photodetector and electrooptical modulator on GaAs substrate

Ching Ting Lee, Cheng Hsian Tsai

研究成果: Paper同行評審

摘要

Double steps of super-cooling liquid phase epitaxial method were used to grow PIN and Mach-Zehnder electrooptical modulator on GaAs substrate. The singlemode Mach-Zehnder configuration is (N--Ga0.65Al0.35 As)-(N--Ga0.67Al0.33As) - (N+-Ga0.65Al0.35As) - GaAs (substrate). On the other hand, the confguration of PIN photodetector is (N+-GaAs) - (N--GaAs) - (P+ - GaAs) - GaAs (substrate). Semiconductor laser with wavelength 0.85 μm was coupled into Mach-Zehnder modulator and modulated by applied electrical field, this modulated optical signal was then detected by the PIN photodiode.

原文English
DOIs
出版狀態Published - 1994
事件1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
持續時間: 1994 七月 121994 七月 15

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
國家Taiwan
城市Hsinchu
期間94-07-1294-07-15

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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