Monolithic integration and performance of photodetector and electrooptical modulator on GaAs substrate

Ching Ting Lee; Cheng Hsian Tsai

doi:10.1109/EDMS.1994.771286

Monolithic integration and performance of photodetector and electrooptical modulator on GaAs substrate

Ching Ting Lee, Cheng Hsian Tsai

光電科學與工程學系

研究成果: Paper › 同行評審

摘要

Double steps of super-cooling liquid phase epitaxial method were used to grow PIN and Mach-Zehnder electrooptical modulator on GaAs substrate. The singlemode Mach-Zehnder configuration is (N^--Ga_0.65Al_0.35 As)-(N^--Ga_0.67Al_0.33As) - (N⁺-Ga_0.65Al_0.35As) - GaAs (substrate). On the other hand, the confguration of PIN photodetector is (N⁺-GaAs) - (N^--GaAs) - (P⁺ - GaAs) - GaAs (substrate). Semiconductor laser with wavelength 0.85 μm was coupled into Mach-Zehnder modulator and modulated by applied electrical field, this modulated optical signal was then detected by the PIN photodiode.

原文	English
DOIs	https://doi.org/10.1109/EDMS.1994.771286
出版狀態	Published - 1994
事件	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan 持續時間: 1994 7月 12 → 1994 7月 15

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
國家/地區	Taiwan
城市	Hsinchu
期間	94-07-12 → 94-07-15

All Science Journal Classification (ASJC) codes

工業與製造工程
電子、光磁材料
電氣與電子工程

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10.1109/EDMS.1994.771286

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引用此

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title = "Monolithic integration and performance of photodetector and electrooptical modulator on GaAs substrate",

abstract = "Double steps of super-cooling liquid phase epitaxial method were used to grow PIN and Mach-Zehnder electrooptical modulator on GaAs substrate. The singlemode Mach-Zehnder configuration is (N--Ga0.65Al0.35 As)-(N--Ga0.67Al0.33As) - (N+-Ga0.65Al0.35As) - GaAs (substrate). On the other hand, the confguration of PIN photodetector is (N+-GaAs) - (N--GaAs) - (P+ - GaAs) - GaAs (substrate). Semiconductor laser with wavelength 0.85 μm was coupled into Mach-Zehnder modulator and modulated by applied electrical field, this modulated optical signal was then detected by the PIN photodiode.",

author = "Lee, {Ching Ting} and Tsai, {Cheng Hsian}",

note = "Funding Information: The authors wish to thank National Science Council for finacial support (NSC-81-0417-E-008-545).; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771286",

language = "English",

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TY - CONF

T1 - Monolithic integration and performance of photodetector and electrooptical modulator on GaAs substrate

AU - Lee, Ching Ting

AU - Tsai, Cheng Hsian

N1 - Funding Information: The authors wish to thank National Science Council for finacial support (NSC-81-0417-E-008-545).

PY - 1994

Y1 - 1994

N2 - Double steps of super-cooling liquid phase epitaxial method were used to grow PIN and Mach-Zehnder electrooptical modulator on GaAs substrate. The singlemode Mach-Zehnder configuration is (N--Ga0.65Al0.35 As)-(N--Ga0.67Al0.33As) - (N+-Ga0.65Al0.35As) - GaAs (substrate). On the other hand, the confguration of PIN photodetector is (N+-GaAs) - (N--GaAs) - (P+ - GaAs) - GaAs (substrate). Semiconductor laser with wavelength 0.85 μm was coupled into Mach-Zehnder modulator and modulated by applied electrical field, this modulated optical signal was then detected by the PIN photodiode.

AB - Double steps of super-cooling liquid phase epitaxial method were used to grow PIN and Mach-Zehnder electrooptical modulator on GaAs substrate. The singlemode Mach-Zehnder configuration is (N--Ga0.65Al0.35 As)-(N--Ga0.67Al0.33As) - (N+-Ga0.65Al0.35As) - GaAs (substrate). On the other hand, the confguration of PIN photodetector is (N+-GaAs) - (N--GaAs) - (P+ - GaAs) - GaAs (substrate). Semiconductor laser with wavelength 0.85 μm was coupled into Mach-Zehnder modulator and modulated by applied electrical field, this modulated optical signal was then detected by the PIN photodiode.

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Y2 - 12 July 1994 through 15 July 1994

ER -

Monolithic integration and performance of photodetector and electrooptical modulator on GaAs substrate

摘要

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