Morphology evolution of pyramid-like nanostructures on cobalt thin films during deposition by sputtering

Shih Wei Chen, Jin Ruey Wen, Chuan Pu Liu, Jiun Nan Chen

研究成果: Conference article同行評審

摘要

The cobalt thin films are grown by D.C. magnetron sputtering as a function of the target-to-substrate distance, bias and power on both Si (100) and (111) substrates. The crystal structure and morphology of the thin films are characterized by 4-point probe, x-ray diffraction, scanning electron microscopy, transmission electron microscopy and atomic force microscopy. It is found that the cobalt crystal structure can be varied from HCP to FCC by varying die target-to-substrate distance from 6 to 10 cm. The resistivity, roughness and the preferred orientation of the thin films are greatly affected by the substrate bias and power. The lowest resistivity of Co films is 9.8 μ Ω -cm when deposited at the target-to-substrate distance of 6cm, the applied power of 50W and the substrate bias of -75 volts. In addition, pyramid-like nanostructures with sharp tips are formed on the surface of the thin films when negative bias is applied. The faceted planes on the nanostructures depend on the resulting Co crystal structure while the size and density are determined by the growth parameters. The evolution of the surface nanostructures are systematically examined as a function of substrate bias and thin film thickness. The formation mechanism of the surface nanostructures is discussed in the paper.

原文English
頁(從 - 到)107-112
頁數6
期刊Materials Research Society Symposium - Proceedings
739
出版狀態Published - 2002 1月 1
事件Three-Dimensional Nanoengineered Assemblies - Boston, MA, United States
持續時間: 2002 12月 12002 12月 5

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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