MOSFET tunneling spectroscopy at low temperature

Mingqiang Bao, Fei Liu, Filipp Baron, Kang L. Wang, Ruigang Li

研究成果: Paper同行評審

摘要

Electron tunneling spectroscopy is used to study the drain-source current spectra of metal-oxide-semiconductor field-effect transistor (MOSFET). The drain-source current (I ds) together with its first and second derivatives with respect to the drain-source voltage (V ds) deliver the current spectra, which allow detailed study of MOSFET's fundamental electrical performance. Measured at 4.2K, the experimental results reveal that as V ds, increases, the first derivative of drain-source current will first decrease, then increase and finally decrease again. The measured MOSFET spectra show that there are fine features in the second derivative, and those features are used to extract trap information.

原文English
頁面147-164
頁數18
出版狀態Published - 2005
事件Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium - Honolulu, HI, United States
持續時間: 2004 10月 32004 10月 8

Conference

ConferenceNanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium
國家/地區United States
城市Honolulu, HI
期間04-10-0304-10-08

All Science Journal Classification (ASJC) codes

  • 一般工程

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