Electron tunneling spectroscopy is used to study the drain-source current spectra of metal-oxide-semiconductor field-effect transistor (MOSFET). The drain-source current (I ds) together with its first and second derivatives with respect to the drain-source voltage (V ds) deliver the current spectra, which allow detailed study of MOSFET's fundamental electrical performance. Measured at 4.2K, the experimental results reveal that as V ds, increases, the first derivative of drain-source current will first decrease, then increase and finally decrease again. The measured MOSFET spectra show that there are fine features in the second derivative, and those features are used to extract trap information.
|出版狀態||Published - 2005|
|事件||Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium - Honolulu, HI, United States|
持續時間: 2004 10月 3 → 2004 10月 8
|Conference||Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium|
|期間||04-10-03 → 04-10-08|
All Science Journal Classification (ASJC) codes
- 工程 (全部)