MOVPE growth of InGaN/GaN multiple quantum wells for the blue laser diode applications

A. T. Cheng, Y. K. Su, W. C. Lai

研究成果: Article

4 引文 斯高帕斯(Scopus)

摘要

The optical and crystal properties of InGaN/GaN multiple quantum wells (MQWs) grown by MOVPE were characterized using room-temperature photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD), respectively. The emission wavelength showed a blueshift with higher growth temperature as well as lower ammonia flow rate. The emission intensity of PL increased with increasing the number of InGaN/GaN MQW pairs, however, the full width at half maximum (FWHM) of band-edge emission was degraded. Not only was the indium mole fraction determined, but the abrupt interfaces between wells and barriers were observed from HRXRD measurement results. These results suggests that one can improve the optical and crystal qualities of InGaN/GaN MQWs by optimizing the growth temperature, ammonia flow rate and the number of the MQW pairs for the blue laser diode applications.

原文English
頁(從 - 到)508-510
頁數3
期刊Journal of Crystal Growth
298
發行號SPEC. ISS
DOIs
出版狀態Published - 2007 一月 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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