Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Chun Cheng Lin; Jian Fu Tang; Hsiu Hsien Su; Cheng Shong Hong; Chih Yu Huang; Sheng Yuan Chu

doi:10.1063/1.4955063

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Chun Cheng Lin, Jian Fu Tang, Hsiu Hsien Su, Cheng Shong Hong, Chih Yu Huang, Sheng Yuan Chu

電機工程學系

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

摘要

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li_0.06Zn_0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li⁺ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

原文	English
文章編號	244506
期刊	Journal of Applied Physics
卷	119
發行號	24
DOIs	https://doi.org/10.1063/1.4955063
出版狀態	Published - 2016 6月 28

All Science Journal Classification (ASJC) codes

一般物理與天文學

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10.1063/1.4955063

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title = "Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current",

abstract = "The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.",

author = "Lin, {Chun Cheng} and Tang, {Jian Fu} and Su, {Hsiu Hsien} and Hong, {Cheng Shong} and Huang, {Chih Yu} and Chu, {Sheng Yuan}",

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AU - Lin, Chun Cheng

AU - Tang, Jian Fu

AU - Su, Hsiu Hsien

AU - Hong, Cheng Shong

AU - Huang, Chih Yu

AU - Chu, Sheng Yuan

PY - 2016/6/28

Y1 - 2016/6/28

N2 - The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

AB - The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

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Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

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