Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Chun Cheng Lin, Jian Fu Tang, Hsiu Hsien Su, Cheng Shong Hong, Chih Yu Huang, Sheng Yuan Chu

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

原文English
文章編號244506
期刊Journal of Applied Physics
119
發行號24
DOIs
出版狀態Published - 2016 六月 28

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

引用此