摘要
The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.
原文 | English |
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文章編號 | 244506 |
期刊 | Journal of Applied Physics |
卷 | 119 |
發行號 | 24 |
DOIs | |
出版狀態 | Published - 2016 6月 28 |
All Science Journal Classification (ASJC) codes
- 物理與天文學 (全部)