Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Chun Cheng Lin; Jian Fu Tang; Hsiu Hsien Su; Cheng Shong Hong; Chih Yu Huang; Sheng Yuan Chu

doi:10.1063/1.4955063

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Chun Cheng Lin, Jian Fu Tang, Hsiu Hsien Su, Cheng Shong Hong, Chih Yu Huang, Sheng Yuan Chu

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

摘要

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li_0.06Zn_0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li⁺ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

原文	English
文章編號	244506
期刊	Journal of Applied Physics
卷	119
發行號	24
DOIs	https://doi.org/10.1063/1.4955063
出版狀態	Published - 2016 6月 28

All Science Journal Classification (ASJC) codes

物理與天文學 (全部)

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10.1063/1.4955063

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title = "Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current",

abstract = "The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.",

author = "Lin, {Chun Cheng} and Tang, {Jian Fu} and Su, {Hsiu Hsien} and Hong, {Cheng Shong} and Huang, {Chih Yu} and Chu, {Sheng Yuan}",

note = "Funding Information: This study was supported by the Ministry of Science and Technology of Taiwan under Grant Nos. NSC 102-2221-E-006-216-MY3, NSC 102-2221-E-006-186-MY3, and MOST 103-2221-E-017-012-MY3. Publisher Copyright: {\textcopyright} 2016 Author(s).",

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doi = "10.1063/1.4955063",

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AU - Lin, Chun Cheng

AU - Tang, Jian Fu

AU - Su, Hsiu Hsien

AU - Hong, Cheng Shong

AU - Huang, Chih Yu

AU - Chu, Sheng Yuan

N1 - Funding Information: This study was supported by the Ministry of Science and Technology of Taiwan under Grant Nos. NSC 102-2221-E-006-216-MY3, NSC 102-2221-E-006-186-MY3, and MOST 103-2221-E-017-012-MY3. Publisher Copyright: © 2016 Author(s).

PY - 2016/6/28

Y1 - 2016/6/28

N2 - The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

AB - The multi-step resistive switching (RS) behavior of a unipolar Pt/Li0.06Zn0.94O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li+ ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

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JO - Journal of Applied Physics

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Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

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