Multienergy gold ion implantation for enhancing the field electron emission characteristics of heterogranular structured diamond films grown on Au-coated Si substrates

K. J. Sankaran, D. Manoharan, B. Sundaravel, I. N. Lin

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Multienergy Au-ion implantation enhanced the electrical conductivity of heterogranular structured diamond films grown on Au-coated Si substrates to a high level of 5076.0 (Ω cm)-1 and improved the field electron emission (FEE) characteristics of the films to low turn-on field of 1.6 V/μm, high current density of 5.4 mA/cm2 (@ 2.65 V/μm), and high lifetime stability of 1825 min. The catalytic induction of nanographitic phases in the films due to Au-ion implantation and the formation of diamond-to-Si eutectic interface layer due to Au-coating on Si together encouraged the efficient conducting channels for electron transport, thereby improved the FEE characteristics of the films.

原文English
文章編號101603
期刊Applied Physics Letters
109
發行號10
DOIs
出版狀態Published - 2016 九月 5

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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