Multilayered barium titanate thin films by sol-gel method for nonvolatile memory application

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

The modification of multispin casting multilayered barium titanate (BTO) thin films on indium tin oxide (ITO)/glass substrate without doping other elements is adopted to improve the memory performance. The X-ray photoelectron spectroscopy analysis reveals the concentration of oxygen vacancies can be reduced by the increasing number of the BTO layer. Mechanisms of conducting paths relating to the concentration of oxygen vacancies will also be explicated. The memory devices showed typical bipolar resistive switching behavior and an ON/OFF ratio of over 106. The memory devices also exhibited outstanding uniformity. A retention time of over 105 s without fluctuation at room temperature and 85 °C can be achieved.

原文English
文章編號6949144
頁(從 - 到)4090-4097
頁數8
期刊IEEE Transactions on Electron Devices
61
發行號12
DOIs
出版狀態Published - 2014 12月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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