Multiple negative-differential-resistance (NDR) of InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT)

Wen Chau Liu, Jung Hui Tsai, Wen Shiung Lour, Lih Wen Laih, Kong Beng Thei, Cheng Zu Wu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

An interesting multiple S-shaped negative-differential-resistance (NDR) phenomenon is observed for an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) under the inverted operation mode. This behavior is resulted from a sequential avalanche multiplication and two-stage barrier lowering effect. The two-stage barrier lowering effect is assumed to be caused by the high valence-band-discontinuity (ΔEυ) to conduction-band-discontinuity (ΔEc) ratio at InGaP/GaAs heterointerfare which gives holes and electrons accumulation effect successively. Under normal operation mode, a typical common-emitter current gain of 60 is obtained at collector current density of 400 A/cm2 for the studied HEBT without emitter-edge thinning structure. Consequently, the controlled switching and transistor performances provide a promise of the studied device for circuit applications.

原文English
頁(從 - 到)130-132
頁數3
期刊IEEE Electron Device Letters
17
發行號3
DOIs
出版狀態Published - 1996 三月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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