(N H4)2 Sx-treated AlGaN/GaN MOS-HEMTs with ZnO gate dielectric layer

Ya Lan Chiou, Ching Ting Lee

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

指紋

深入研究「(N H4)2 Sx-treated AlGaN/GaN MOS-HEMTs with ZnO gate dielectric layer」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Chemical Compounds