摘要
Nano-crystalline carbon nitride has been successfully synthesized at a temperature below 100 °C from an adenine(C5N5H5) target sputtered by an Ar ion beam. Because adenine possesses a ring structure similar to the hypothetical β-C3N4 phase, the use of this bio-molecular compound as the target is believed to reduce the energy barrier of carbon-nitride growth. The effect of Ar ion-sputtering voltage on the film growth and the effect of extra-N-atom incorporation on the carbon-nitride film growth are examined in this study. Only a carbon film is formed with an ion energy of 500 V. For the ion-beam energy above 750 V, carbon nitride films are deposited, and there is some hydrogen incorporation in the films. The N/C composition ratio in the films could reach 1:1 and is independent on the ion beam voltage. The nitrogen is bonded with carbon within the films, as determined by the IR and XPS measurements. However, the films deposited at a higher ion voltage could possess some original functional groups of adenine. A strong and broad peak at a d-spacing of 0.32 nm, comparable to the calculated d-spacing of the β-C3N4(110), is observed in the XRD spectra of the carbon nitride films. The TEM results indicated that the film contained nano-crystalline grains. Several d values are also in good agreement with those of adenine and the calculated values of β-C3N4. The C/N ratios of the films are still kept at almost 1:1 with N atoms added during deposition. The XRD spectra and IR spectra of these films are all similar to the film deposited without nitrogen source.
| 原文 | English |
|---|---|
| 頁(從 - 到) | 605-609 |
| 頁數 | 5 |
| 期刊 | Diamond and Related Materials |
| 卷 | 8 |
| 發行號 | 2-5 |
| DOIs | |
| 出版狀態 | Published - 1999 3月 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 機械工業
- 一般物理與天文學
- 材料化學
- 一般化學
- 電氣與電子工程
指紋
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