Nano on nano

T. S. Yeoh; C. P. Liu; R. B. Swint; A. Gaur; V. C. Elarde; J. J. Coleman

doi:10.1109/MCD.2003.1203175

Nano on nano

T. S. Yeoh, C. P. Liu, R. B. Swint, A. Gaur, V. C. Elarde, J. J. Coleman

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

High-quality QD growth takes place in a narrow window of parameters. This window can be used to selectively grow QDs by altering the local chemistry of the surface by indium segregation. The final morphology of the segregated indium can be changed to organize the selectively grown QDs. Selective area epitaxy by indium segregation is not sensitive to lithographic process variations affecting growth rate and uniformity. Furthermore, it minimizes the number of processing and thermal steps that are detrimental to QDs. Its compatibility with traditional selective area and nanolithography techniques makes it a versatile tool for creating future devices.

原文	English
頁（從 - 到）	26-31
頁數	6
期刊	IEEE Circuits and Devices Magazine
卷	19
發行號	3
DOIs	https://doi.org/10.1109/MCD.2003.1203175
出版狀態	Published - 2003 5月

All Science Journal Classification (ASJC) codes

電子、光磁材料
儀器
電氣與電子工程

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10.1109/MCD.2003.1203175

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abstract = "High-quality QD growth takes place in a narrow window of parameters. This window can be used to selectively grow QDs by altering the local chemistry of the surface by indium segregation. The final morphology of the segregated indium can be changed to organize the selectively grown QDs. Selective area epitaxy by indium segregation is not sensitive to lithographic process variations affecting growth rate and uniformity. Furthermore, it minimizes the number of processing and thermal steps that are detrimental to QDs. Its compatibility with traditional selective area and nanolithography techniques makes it a versatile tool for creating future devices.",

author = "Yeoh, {T. S.} and Liu, {C. P.} and Swint, {R. B.} and A. Gaur and Elarde, {V. C.} and Coleman, {J. J.}",

note = "Funding Information: This work was supported by NSF ECS 99-00258, the DARPA University Optoelectronics Centers program, and the U.S. Department of Energy under Award No. DEFG02-91ER45439.",

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AU - Liu, C. P.

AU - Swint, R. B.

AU - Gaur, A.

AU - Elarde, V. C.

AU - Coleman, J. J.

N1 - Funding Information: This work was supported by NSF ECS 99-00258, the DARPA University Optoelectronics Centers program, and the U.S. Department of Energy under Award No. DEFG02-91ER45439.

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Nano on nano

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