High-quality QD growth takes place in a narrow window of parameters. This window can be used to selectively grow QDs by altering the local chemistry of the surface by indium segregation. The final morphology of the segregated indium can be changed to organize the selectively grown QDs. Selective area epitaxy by indium segregation is not sensitive to lithographic process variations affecting growth rate and uniformity. Furthermore, it minimizes the number of processing and thermal steps that are detrimental to QDs. Its compatibility with traditional selective area and nanolithography techniques makes it a versatile tool for creating future devices.
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